Electron localization in defective ceria films: a study with scanning-tunneling microscopy and density-functional theory.

نویسندگان

  • Jan-Frederik Jerratsch
  • Xiang Shao
  • Niklas Nilius
  • Hans-Joachim Freund
  • Cristina Popa
  • M Veronica Ganduglia-Pirovano
  • Asbjörn M Burow
  • Joachim Sauer
چکیده

Scanning-tunneling microscopy and density-functional theory have been employed to identify the spatial correlation between an oxygen vacancy and the associated Ce(3+) ion pair in a defective CeO(2)(111) film. The two Ce(3+) ions can occupy different cationic shells around the vacancy. The resulting variation in the chemical environment leads to a splitting of the filled Ce(3+) f levels, which is detected with STM spectroscopy. The position of the Ce(3+) ion pair is reflected in characteristic defect patterns observed in empty-state STM images, which arise from the bright appearance of Ce(4+) ions next to the defect while the Ce(3+) remain dark. Both findings demonstrate that at least one excess electron localizes in a Ce ion that is not adjacent to the O vacancy.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Titration of Ce3+ ions in the CeO2(111) surface by Au adatoms.

The role of surface and subsurface O vacancies for gold adsorption on crystalline CeO2(111) films has been investigated by scanning tunneling microscopy and density functional theory. Whereas surface vacancies serve as deep traps for the Au atoms, subsurface defects promote the formation of characteristic Au pairs with a mean atom distance of two ceria lattice constants (7.6 Å). Hybrid density ...

متن کامل

The NECIS Focus in Nanotechnology Editors

The atomic surface structure of compound semiconductors plays a large role in the growth of semiconductor films and the final microstructure of the film. During growth of InxGa1−xAs films, a mixed-termination surface consisting of a (4x3) reconstruction with common binary InAs or GaAs reconstructions, such as the α2(2x4), has been observed. We have used Density Functional Theory (DFT) to determ...

متن کامل

Csri Summer Proceedings 2006

The atomic surface structure of compound semiconductors plays a large role in the growth of semiconductor films and the final microstructure of the film. During growth of InxGa1−xAs films, a mixed-termination surface consisting of a (4x3) reconstruction with common binary InAs or GaAs reconstructions, such as the α2(2x4), has been observed. We have used Density Functional Theory (DFT) to determ...

متن کامل

Nano-structural Characterization of Post-annealed ZnO Thin Films by X-ray Diffraction and Field Emission Scanning Electron Microscopy

ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...

متن کامل

Nano-structural Characterization of Post-annealed ZnO Thin Films by X-ray Diffraction and Field Emission Scanning Electron Microscopy

ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review letters

دوره 106 24  شماره 

صفحات  -

تاریخ انتشار 2011